“
“Background: The aims of this study were to evaluate tricuspid annular plane systolic excursion (TAPSE) as a predictor of left ventricular (LV) reverse remodeling and clinical benefit of cardiac synchronization therapy (CRT) and to evaluate the effect of CRT on TAPSE in patients with mildly symptomatic systolic heart failure as a substudy of the REsyncronization reVErses Remodeling in Systolic left vEntricular dysfunction (REVERSE) trial.

Methods and Results: Patients (n = 450) were randomized

in a 2:1 fashion to CRT ON or CRT OFF and followed for 12 months. End points were reverse LV remodeling defined as a reduction in LV end-systolic volume of >= 20 mL/m(2) by echocardiography and a clinical composite score, defined as freedom from clinical deterioration. TAPSE was an independent predictor check details of reverse remodeling, OR = 1.08 (95% CI 1.03-1.14) per mm increase and a favorable clinical composite score, OR = 1.08(95% CI 1.02-1.14). No significant interactions were observed between TAPSE and CRT ON. CRT ON was not associated with a significant effect on TAPSE compared to CRT OFF, -0.8 +/- 4.7 vs. 0.3 +/- 5 mm, P = .06.

Conclusion: TAPSE is an independent predictor

of clinical response and improved reverse remodeling in patients with mildly symptomatic heart failure. The effect of CRT is not modified by TAPSE in the present population. CRT is not associated with a clinically significant effect on TAPSE. (J Cardiac Fail 2011;17:100-107)”
“Using a dedicated scanning electron PD-1/PD-L1 Inhibitor 3 supplier PP2 research buy microscope, operating in the spot mode, the charging properties of muscovite mica have been studied in the energy range of 100-8000 eV. The intrinsic yield curve sigma(0)(E), representing the variation of the yield of the uncharged material with the energy E, has been established: the maximum value of the yield is 3.92 at E=300 eV and the two crossovers corresponding to sigma(0)(E)=1 are, respectively, at energies E(I)< 100 eV and E(II)=4850 eV. At a given energy and under a low current density

J <= 100 nA/cm(2), the yield varies with the electron fluence from its intrinsic value sigma(0) up to the value corresponding to the self-regulated regime for which sigma=1. This variation is independent of J. The fluence dependence of the yield sigma(D) is due to the internal field produced by the accumulation of charges that blocks the emission when the charging is positive and enhances it when it is negative. At room temperature, the relaxation time of stored charges is estimated to be of the order of 250 s for holes and 150 s for electrons. Three current density effects have been observed when J >= 400 nA/cm(2). (i) The variation of sigma(D) with the fluence D depends on J. (ii) Negative charging is obtained at high current density in the energy range (E(I), E(II)) where the material is normally positively charged at low current density.